Samsung Foundry announced that it's beginning mass production of its first-generation chips on the 3nm node. It's based on the new GAA (Gate-All-Around) transistor architecture, which is the next step after FinFET. Compared to 5nm, Samsung's first-gen 3nm chips can provide up to 23% better performance, up to 45% reduced power consumption, and a 16% reduction in surface area. Samsung's second-gen 3nm node will be even more impressive - compared to 5nm, Samsung touts that it will achieve a 50% reduction in power consumption, up to 30% improvement in performance, and a 35% reduction of...
from GSMArena.com - Latest articles https://bit.ly/3bEP8pU
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